A capacitive silicon resonator with a movable electrode structure for gap width reduction
A capacitive silicon resonator with a movable electrode structure for gap width reduction
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DOI：
10.1088/0960-1317/24/2/025006
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发表时间：
2014-02-01
影响因子：
2.3
通讯作者：
Ono, Takahito
中科院分区：
文献类型：
--
作者：
Nguyen Van Toan;Toda, Masaya;Ono, Takahito
本文提出了一种可移动电极结构的电容式硅谐振器，该谐振器可以减小运动电阻以降低插入损耗和相位噪声，并增加调谐频率范围以补偿硅振荡器的温度漂移。制备的长500 μ m、宽440 μ m、厚5 μ m器件的谐振频率为9.65 MHz，质量因数为49 000。结果表明，采用静电驱动的活动电极结构，其运动电阻降低了200倍，输出信号（插入损耗）增加了21 dB，频率调谐特性也比不使用活动电极的结构提高了7倍。
This paper presents a capacitive silicon resonator with movable electrode structures to reduce the motional resistance for lower insertion loss and lower phase noise, and also increase the tuning frequency range for the compensation of temperature drift of the silicon oscillator. The resonant frequency of the fabricated device with a length of 500 mu m, width of 440 mu m and thickness of 5 mu m is observed at 9.65 MHz, and the quality factor is 49 000. Using an electrostatically drived movable electrode structure, it is shown that the motional resistance is reduced by 200 times, the output signal (insertion loss) is increased by 21 dB and the tuning characteristic of the frequency is also increased by seven times over that of the structures without movable electrodes.