Boron removal by dissolution and recrystallization of silicon in a sodium–silicon solution
Boron removal by dissolution and recrystallization of silicon in a sodium–silicon solution
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DOI：
10.1016/j.seppur.2013.08.022
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发表时间：
2013-10
影响因子：
8.6
通讯作者：
H. Morito;M. Uchikoshi;H. Yamane
中科院分区：
文献类型：
--
作者：
H. Morito;M. Uchikoshi;H. Yamane
将低纯度的Si粉末溶解在Na溶剂中，在氧化镁坩埚中，在1173 K的温度下，将Na - Si溶液中的Na蒸发，使Si重结晶。几种杂质元素在坩埚底部以化合物的形式析出。辉光放电质谱分析表明，除Na和Mg外，晶体中大多数杂质元素的浓度都有所降低。通过再结晶使硼(B)浓度从9.1质量ppm降至0.3质量ppm。此外，B浓度在晶体表面的深度分布证实了凝固偏析。
Low-purity Si powder was dissolved in Na solvent, and Si recrystallized by the evaporation of Na from the Na–Si solution at 1173 K in a magnesium oxide crucible. Several impurity elements precipitated as compounds at the bottom of the crucible. Glow-discharge mass spectrometry showed a decrease in the concentration of most impurity elements, except Na and Mg, in the crystallized Si. The boron (B) concentration was reduced from 9.1 to 0.3 mass ppm by recrystallization. In addition, solidification segregation was confirmed by the depth profile of the B concentration from the crystal surface.