PAIR-PRODUCTION ENERGIES IN SILICON AND GERMANIUM BOMBARDED WITH LOW-ENERGY ELECTRONS.
PAIR-PRODUCTION ENERGIES IN SILICON AND GERMANIUM BOMBARDED WITH LOW-ENERGY ELECTRONS.
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DOI：
10.1063/1.1661685
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发表时间：
1972-07
影响因子：
3.2
通讯作者：
J. R. Fiebiger;R. Muller
中科院分区：
文献类型：
--
作者：
J. R. Fiebiger;R. Muller
利用低能电子（10 - 24kev）作为电离源，测量了硅和锗中自由载流子的对产能Ep。产生的载流子数量通过改进的Haynes - Shockley技术与pn结集电极和叠加漂移场进行测量。测定了锗中Ep值为2.91 eV，硅中Ep值为3.64 eV。这些结果与Klein和Shockley的预测值非常接近，并与高能辐照源测得的Ep值相对应。硅的结果证实了诺里斯和吉本斯测量的类似轰击条件的值。锗的结果明显低于先前报道的Ep值的平均值。
The pair‐production energy Ep for free carriers in silicon and germanium is measured using low‐energy electrons (10–24 keV) as ionizing sources. The number of carriers generated is measured via a modified Haynes‐Shockley technique with a pn junction collector and a super‐posed drift field. Experimental values for Ep of 2.91 eV in germanium and 3.64 eV in silicon are determined. These results agree quite closely with the predicted values of Klein and Shockley and correspond to values for Ep measured with higher‐energy irradiation sources. The result for silicon confirms values for comparable bombardment conditions measured by Norris and Gibbons. The result for germanium is appreciably lower than the average of previously reported Ep values.