Chemical vapor infiltration of activated carbon with tetramethylsilane
Chemical vapor infiltration of activated carbon with tetramethylsilane
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DOI：
10.1016/j.carbon.2014.07.018
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发表时间：
2014-11
期刊：
影响因子：
10.9
通讯作者：
Christian Pflitsch;Benjamin Curdts;M. Helmich;C. Pasel;C. Notthoff;D. Bathen;B. Atakan
中科院分区：
文献类型：
--
作者：
Christian Pflitsch;Benjamin Curdts;M. Helmich;C. Pasel;C. Notthoff;D. Bathen;B. Atakan
研究了在200 hPa总压和15（mol-）% TMS的气相浓度下，在氮气中用四甲基硅烷（TMS）对活性炭进行化学气相渗透。详细讨论了温度对浸渗过程的影响。高达873 K，在动力学控制的制度，导致高达约42（重量）%的高负载的渗透进行。改性的材料显示出高的BET-表面和孔体积值，表明渗透硅层对碳基材的表面形态的充分采用。渗透材料的低抗氧化性和EDX测量产生渗透材料是硅的假设。在高于873 K的较高渗透温度下，形成具有圆柱形纳米结构形状的颗粒。EDX测量表明，碳化硅在这些温度下产生。
Chemical vapor infiltration of activated carbon with tetramethylsilane (TMS) at 200 hPa total pressure and a gas phase concentration of 15 (mol-)% TMS in nitrogen is studied. The influence of temperature on the infiltration process is discussed in detail. Up to 873 K, the infiltration is performed in the kinetically controlled regime resulting in high loadings up to around 42 (wt.-)%. The modified materials show high values for BET-surface and pore volume indicating a sufficient adoption of the infiltrated silicon layer to the surface morphology of the carbon substrates. Low oxidation resistance of the infiltrated material and EDX measurements give rise to the assumption that the infiltrated material is silicon. At higher infiltration temperatures above 873 K, particles are formed which have the shape of cylindrical nanostructures. EDX measurements reveal that silicon carbide is produced at these temperatures.