Open circuit potential monitored digital photocorrosion of GaAs/AlGaAs quantum well microstructures
Open circuit potential monitored digital photocorrosion of GaAs/AlGaAs quantum well microstructures
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DOI：
10.1063/1.5023134
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发表时间：
2018-04-09
影响因子：
4
通讯作者：
Dubowski, Jan J.
中科院分区：
文献类型：
--
作者：
Aithal, Srivatsa;Dubowski, Jan J.
具有原子级深度分辨率的半导体晶圆的纳米结构是一项具有挑战性的任务，这主要是由于用于原位监测此类过程的仪器的可用性有限。传统的数字蚀刻依赖于蚀刻周期之间或结束时应用的校准程序和繁琐的诊断。我们开发了一种基于光致发光 (PL) 的工艺，用于以每周期低于 0.2 nm 的速率监测 GaAs/AlGaAs 微结构的原位数字光腐蚀 (DPC)。在本次交流中，我们证明可以通过在微结构的光腐蚀表面和安装在样品室中的 Ag/AgCl 参比电极之间测量的开路电位 (OCP) 来监测 GaAs/AlGaAs 微结构的 DPC。 PL 和 OCP 最大值位置之间的良好相关性表明，对于不一定表现出可测量 PL 发射的材料，可以对 DPC 过程进行原位监测。 (C) 2018 年作者。
Nanostructuring of semiconductor wafers with an atomic level depth resolution is a challenging task, primarily due to the limited availability of instruments for in situ monitoring of such processes. Conventional digital etching relies on calibration procedures and cumbersome diagnostics applied between or at the end of etching cycles. We have developed a photoluminescence (PL) based process for monitoring in situ digital photocorrosion (DPC) of GaAs/AlGaAs microstructures at rates below 0.2 nm per cycle. In this communication, we demonstrate that DPC of GaAs/AlGaAs microstructures could be monitored with open circuit potential (OCP) measured between the photocorroding surface of a microstructure and an Ag/AgCl reference electrode installed in the sample chamber. The excellent correlation between the position of both PL and OCP maxima indicates that the DPC process could be monitored in situ for materials that do not necessarily exhibit measurable PL emission. (C) 2018 Author(s).