Optoelectronic response of a WS2 tubular p-n junction
Optoelectronic response of a WS2 tubular p-n junction
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DOI：
10.1088/2053-1583/aab670
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发表时间：
2018-04
期刊：
影响因子：
5.5
通讯作者：
Yijin Zhang;M. Onga;Feng Qin;Wu Shi;A. Zak;R. Tenne;J. H. Smet;Yoshihiro Iwasa
中科院分区：
文献类型：
--
作者：
Yijin Zhang;M. Onga;Feng Qin;Wu Shi;A. Zak;R. Tenne;J. H. Smet;Yoshihiro Iwasa
VI-B族过渡金属二硫属化合物（TMD）由于其优异的电学和光学性质而引起了人们的广泛兴趣。他们在spintronics和valleytronics社区的材料组合中赢得了自己的地位。通过将二维（2D）片材卷起以形成准一维（1D）管状结构来增强TMD的电性能。从这些管状TMD中制造p-n结将提高它们用于光电器件的潜力，因为这种结代表了基本的构建块。在这里，我们报告的实现的p-n结出一个单一的，孤立的WS 2-nanotube（WS 2-NT）。基于这种p-n结观察了发光二极管的工作和光伏行为。由于准一维性质，所发射的光以及光伏效应表现出强的线偏振特性。光伏效应的外量子效率高达4.8%，远远超过了二维TMD的外量子效率，甚至接近二维TMD的内量子效率。这种效率的提高表明，TMD纳米管是光电应用的上级候选人超过2D TMD。
Due to their favourable and rich electronic and optical properties, group-VI-B transition-metal dichalcogenides (TMDs) have attracted considerable interest. They have earned their position in the materials portfolio of the spintronics and valleytronics communities. The electrical performance of TMDs is enhanced by rolling up the two-dimensional (2D) sheets to form quasi-one-dimensional (1D) tubular structures. The fabrication of p-n junctions out of these tubular TMDs would boost their potential for optoelectronic devices as such junctions represent a fundamental building block. Here, we report the realization of a p-n junction out of a single, isolated WS2-nanotube (WS2-NT). Light-emitting diode operation and photovoltaic behaviour were observed based on such p-n junctions. The emitted light as well as the photovoltaic effect exhibit strong linear polarization characteristics due to the quasi-1D nature. The external quantum efficiency for the photovoltaic effect reaches a value as high as 4.8%, exceeding by far that of 2D TMDs and even approaching the internal quantum efficiency of the 2D TMDs. This efficiency improvement indicates that TMD nanotubes are superior candidates over 2D TMDs for optoelectronic applications.