Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors
Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors
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DOI：
10.1109/tns.2012.2203317
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发表时间：
2012-08-01
影响因子：
1.8
通讯作者：
Bardoux, Alain
中科院分区：
文献类型：
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作者：
Virmontois, Cedric;Goiffon, Vincent;Bardoux, Alain
将几种CMOS图像传感器分别置于4 TeV/g ~ 1825 TeV/g的中子或质子束下，比较了它们的辐射暗电流分布。对于给定的位移损伤剂量，如果适当归一化，热像素尾部分布是非常相似的。在所有测试的CIS设计（4种设计，2种技术）和所有测试的粒子（质子从50 MeV到500 MeV，中子从14 MeV到22 MeV）上都观察到这种行为。由于这一结果，本文提出的所有暗电流分布都可以用一个简单的模型来拟合，该模型具有唯一的两个因素（在不同的实验条件下不变化）。所提出的暗电流直方图归一化方法可用于将任何暗电流分布与本工作中观察到的分布进行比较。本文认为，该模型可以应用于其他设备和/或辐照条件。
Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared. It appears that for a given displacement damage dose, the hot pixel tail distributions are very similar, if normalized properly. This behavior is observed on all the tested CIS designs (4 designs, 2 technologies) and all the tested particles (protons from 50 MeV to 500 MeV and neutrons from 14 MeV to 22 MeV). Thanks to this result, all the dark current distribution presented in this paper can be fitted by a simple model with a unique set of two factors (not varying from one experimental condition to another). The proposed normalization method of the dark current histogram can be used to compare any dark current distribution to the distributions observed in this work. This paper suggests that this model could be applied to other devices and/or irradiation conditions.