GaN-based magnetic semiconductors for nanospintronics
GaN-based magnetic semiconductors for nanospintronics
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DOI：
10.1088/0953-8984/16/48/011
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发表时间：
2004-12-08
影响因子：
2.7
通讯作者：
Hasegawa, S
中科院分区：
文献类型：
--
作者：
Asahi, H;Zhou, YK;Hasegawa, S
GaN基磁性半导体即使在高温下也有望表现出铁磁性。我们研究了过渡金属和稀土掺杂的 GaN 的磁和光学性质。 GaCrN 在 7-400 K 时表现出铁磁特性。在所有测量温度下，磁化强度与磁场 (M-H) 曲线中都观察到明显的磁滞和明显的饱和。我们观察到 GaCrN 层的光致发光 (PL) 发射。 GaGdN 在 7-400 K 时也显示出铁磁特性。在 GaGdN 中观察到尖锐的 PL 发射。 X 射线衍射和 EXAFS 测量显示没有相分离，并且 Cr 和 Gd 原子取代了 Ga 位点。预计可应用于控制电荷（电子和空穴）、自旋和光子的新型器件。
GaN-based magnetic semiconductors are expected to exhibit ferromagnetism even at high temperatures. We have studied the magnetic and optical properties of transition-metal- and rare-earth-doped GaN. GaCrN showed ferromagnetic characteristics at 7-400 K. Clear hysteresis and clear saturation were observed in the magnetization versus magnetic field (M-H) curves at all measuring temperatures. We observed photoluminescence (PL) emission from GaCrN layers. GaGdN also showed ferromagnetic characteristics at 7-400 K. Sharp PL emission was observed for GaGdN. X-ray diffraction and EXAFS measurements showed no phase separation, and that the Cr and Gd atoms substitute Ga sites. Applications to novel devices controlling charges (electrons and holes), spins and photons are expected.