Theory of Fano-Kondo Effect of Transport Properties through Quantum Dots
Theory of Fano-Kondo Effect of Transport Properties through Quantum Dots
复制标题
量子点传输特性的 Fano-Kondo 效应理论
DOI：
10.1143/jpsj.73.3239
复制
发表时间：
2004
影响因子：
1.7
通讯作者：
K. Ueda
中科院分区：
文献类型：
--
作者：
I. Maruyama;N. Shibata;K. Ueda
基于 T 形量子点的理论模型研究了零偏置电导中的 Fano-Kondo 效应。作为栅极电压函数的电导通常由 Fano 不对称参数 q 来表征。随着温度的变化，与近藤温度 T K 相比，电导显示出高温区域和低温区域之间的交叉。其特点是高温下有两个 Fano 不对称峰，而低温下则有 Fano-Kondo 峰内的 Fano-Kondo 平台。通过有限温度密度矩阵重正化群法 (FT -DMRG) 数值计算电导的温度依赖性。
The Fano–Kondo effect in zero-bias conductance is investigated based on a theoretical model of a T-shaped quantum dot. The conductance as a function of gate voltage is generally characterized by the Fano asymmetric parameter q . With varying temperature the conductance shows a crossover between the high- and low-temperature regions compared with the Kondo temperature T K . It is characterized by two Fano asymmetric peaks at high temperatures and by the Fano–Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the finite temperature density matrix renormalization group method (F T -DMRG).