Weak localization effects in ZnO surface wells
Weak localization effects in ZnO surface wells
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ZnO 表面井的局域化效应较弱
DOI：
10.1103/physrevb.60.5832
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发表时间：
1999
影响因子：
3.7
通讯作者：
A. Many
中科院分区：
文献类型：
--
作者：
A. Goldenblum;V. Bogatu;T. Stoica;Y. Goldstein;A. Many
在弱局域化理论的框架下，分析了通过多种方法在ZnO表面井上进行的霍尔效应、磁电阻和电导率测量。ZnO表面井具有一些独特的特性，可以研究弱局域化效应：ZnO具有单谷传导带；即使在室温下，索利斯长度也比弹性平均自由路径大得多；该阱积累了迄今为止在表面量子阱中获得的最大的表面电子浓度；有各种各样的制备方法，其中一些方法可以独立地修改地面井的宽度和深度。这些特征使我们能够研究：在迄今为止报道的量子阱的最大温度范围（1.6-300 K）中存在弱局域化效应；井中子带数量增加对输运性质的影响非弹性散射机制的存在及其权重对整个散射过程的影响；以及从准二维系统到三维系统的过渡。
Hall effect, magnetoresistance, and electrical conductivity measurements, carried out on ZnO surface wells created by a large variety of methods, are analyzed in the frame of the weak-localization theory. The ZnO surface wells have some unique features that allow the investigation of the weak-localization effects: ZnO has a single valley conduction band; the Thouless length is much larger than the elastic mean-free path even at room temperature; the well accumulates the largest surface electron concentration obtained up to now in a surface quantum well; there are a large variety of preparation methods, some of them making it possible to modify independently both the width and the depth of the surface wells. These features allowed us to investigate: the presence of the weak-localization effect in the largest range of temperatures (1.6–300 K) reported up to now for a quantum well; the influence on the transport properties of the increase in the number of subbands in the well; the effect of the presence of more inelastic scattering mechanisms and their weights in the entire scattering process; and the passage from a quasi-two-dimensional system to a three-dimensional one.