Half-metallicity at the (110) interface between a full Heusler alloy and GaAs
Half-metallicity at the (110) interface between a full Heusler alloy and GaAs
复制标题
DOI：
10.1103/physrevb.73.104447
复制
发表时间：
2006-03
影响因子：
3.7
通讯作者：
K. Nagao;Y. Miura;M. Shirai
中科院分区：
文献类型：
--
作者：
K. Nagao;Y. Miura;M. Shirai
The electronic properties of ${\mathrm{Co}}_{2}\mathrm{CrAl}∕\mathrm{GaAs}$ interfaces are investigated by using first-principles calculations with density functional theory. It is found that spin polarization tends to remain relatively high at the (110) interface and reaches almost unity for a specific (110) interfacial structure. Furthermore, the nearly-half-metallic interface turns out to be the most stable of the (110) interfacial structures studied here. Spin polarization calculated only from the $sp$-projected density of states is also examined in order to eliminate the effects stemming from the localized $d$ components. The analysis shows that the high spin polarization at the (110) interface owes little to the localized $d$ component and, therefore, is expected to be fairly relevant to transport properties. ${\mathrm{Co}}_{2}\mathrm{CrSi}∕\mathrm{GaAs}$, ${\mathrm{Co}}_{2}\mathrm{MnSi}∕\mathrm{GaAs}$, and ${\mathrm{Co}}_{2}\mathrm{MnGe}∕\mathrm{GaAs}$ heterostructures are also investigated, and similar half-metal-like behavior at (110) interface is observed for all of them.
The electronic properties of ${\mathrm{Co}}_{2}\mathrm{CrAl}∕\mathrm{GaAs}$ interfaces are investigated by using first-principles calculations with density functional theory. It is found that spin polarization tends to remain relatively high at the (110) interface and reaches almost unity for a specific (110) interfacial structure. Furthermore, the nearly-half-metallic interface turns out to be the most stable of the (110) interfacial structures studied here. Spin polarization calculated only from the $sp$-projected density of states is also examined in order to eliminate the effects stemming from the localized $d$ components. The analysis shows that the high spin polarization at the (110) interface owes little to the localized $d$ component and, therefore, is expected to be fairly relevant to transport properties. ${\mathrm{Co}}_{2}\mathrm{CrSi}∕\mathrm{GaAs}$, ${\mathrm{Co}}_{2}\mathrm{MnSi}∕\mathrm{GaAs}$, and ${\mathrm{Co}}_{2}\mathrm{MnGe}∕\mathrm{GaAs}$ heterostructures are also investigated, and similar half-metal-like behavior at (110) interface is observed for all of them.