OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS
OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS
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DOI：
10.1063/1.106798
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发表时间：
1992-06-15
影响因子：
4
通讯作者：
CARTER, J
中科院分区：
文献类型：
--
作者：
KHAN, MA;KUZNIA, JN;CARTER, J
通过观察量子霍尔效应中的阶梯状特征，证实了宽带隙GaN-AlxGa1-xN异质结中存在二维电子气(2DEG)。室温下测得GaN-Al0.13Ga0.87N异质结的二维迁移率为834cm2/V S。在77~4.2K温度范围内，S的二维电子迁移率基本保持不变，二维载流子浓度约为1×10(11)cm-2。当异质结铝含量超过13%时，2DEG的峰迁移率降低。
We have confirmed the presence of a two-dimensional electron gas (2DEG) in a wide band-gap GaN-AlxGa1-xN heterojunction by observing steplike features in the quantum Hall effect. The 2DEG mobility for a GaN-Al0.13Ga0.87N heterojunction was measured to be 834 cm2/V s at room temperature. It monotonically increased and saturated at a value of 2626 cm2/V s at 77 K. The 2DEG mobility remained nearly constant for temperatures ranging from 77 to 4.2 K. Using Shubnikov-de Haas (SdH) measurements the two-dimensional carrier concentration was estimated to be 1X10(11) cm-2. The peak mobility for the 2DEG was found to decrease with the heterojunction aluminum compositions in excess of 13%.