Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer
Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer
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DOI：
10.1063/1.1697632
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发表时间：
2004-04
影响因子：
4
通讯作者：
A. Alguno;N. Usami;T. Ujihara;K. Fujiwara;G. Sazaki;K. Nakajima;K. Sawano;Y. Shiraki
中科院分区：
文献类型：
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作者：
A. Alguno;N. Usami;T. Ujihara;K. Fujiwara;G. Sazaki;K. Nakajima;K. Sawano;Y. Shiraki
研究了硅基p-i-n二极管本征区嵌入Ge岛的太阳电池中间隔层厚度对电池外量子效率的影响。太阳能电池在近红外区域的EQE响应取决于分隔自组装Ge岛层的间隔物厚度。结果发现，当间隔层厚度可以维持良好的岛的垂直有序性时，EQE响应具有最佳值。另一方面，由于较厚的间隔层导致的岛的随机成核表现出较差的EQE响应。此外，对于较薄的间隔层，观察到太阳能电池的EQE响应急剧下降。
We report on the effects of spacer thickness on the external quantum efficiency (EQE) of the solar cells with Ge islands embedded into the intrinsic region of the Si-based p-i-n diode. The EQE response of the solar cells in the near-infrared region is dependent on the spacer thickness that separates the layers of self-assembled Ge islands. It was found that the EQE response has an optimum value when the spacer thickness can sustain a good vertical ordering of islands. On the other hand, random nucleation of islands due to a thicker spacer layer exhibits an inferior EQE response. Furthermore, a drastic decrease of the EQE response of the solar cells for a thinner spacer layer was observed.