Effects of dielectric thickness and contact area on current-voltage characteristics of thin film metal-insulator-metal diodes
Effects of dielectric thickness and contact area on current-voltage characteristics of thin film metal-insulator-metal diodes
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DOI：
10.1016/j.tsf.2007.08.067
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发表时间：
2008-02-29
期刊：
影响因子：
2.1
通讯作者：
Bhansali, Shekhar
中科院分区：
文献类型：
--
作者：
Krishnan, Subramanian;Stefanakos, Elias;Bhansali, Shekhar
研制了用于室温超灵敏红外探测器的平面非对称Ni-NiO-Cr/Au薄膜金属-绝缘体-金属(MIM)隧道二极管。采用标准的微电子机械系统技术制作了接触面积分别为100pm2和1grin2的MIM二极管。实验确定了反应溅射氧化镍(NiO)薄膜厚度与击穿电压之间的线性关系，并用理论方法验证了二极管的性能。MIM二极管的电流-电压测量表明，随着介质厚度和探测器接触面积的减小，电流从1.5nA增加到0.8 mA。还测定了探测器的整流比，探测器A和B在1V和0.2V时的不对称性分别为4.5和6。此外，观察到这一比例随着偏置电压的增加而增加，这表明了强烈的不对称行为。计算结果与证实隧穿导电的理论预测相一致。这些二极管表现出的非线性和不对称性表明了它们在红外应用中的可行性。(C)2007 Elsevier B.V.保留所有权利。
Planar asymmetric Ni-NiO-Cr/Au thin film Metal-Insulator-Metal (MIM) tunnel diodes were fabricated for use in an ultra-sensitive infrared detector operating at room temperature. MIM diodes with contact areas of 100 pm 2 and I grin 2 were fabricated using standard Micro-Electro Mechanical Systems techniques. A linear relationship between the thickness of reactively sputtered Nickel Oxide (NiO) and the breakdown voltage was experimentally determined, and the diode performance was verified using a theoretical approach. Current-Voltage measurements of the MIM diode revealed an increase in the current from 1.5 nA to 0.8 mA, when the thickness of the dielectric and the contact area of the detector decreased. Also, the rectification ratios of the detectors were determined, exhibiting an asymmetry of 4.5 at 1 V and 6 at 0.2 V for detectors A and B, respectively. Further, the ratio was observed to be increasing with bias voltage suggesting a strong asymmetric behavior. The results are in agreement with the theoretical predictions confirming conduction via tunneling. The nonlinearity and asymmetry exhibited by these diodes suggests their viability in infrared applications. (C) 2007 Elsevier B.V. All rights reserved.