Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit
Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit
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DOI：
10.1364/oe.14.008154
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发表时间：
2006-09-04
期刊：
影响因子：
3.8
通讯作者：
Smit, M.
中科院分区：
文献类型：
--
作者：
Roelkens, G.;Van Thourhout, D.;Smit, M.
观察了连接在绝缘体上硅波导电路上的InP/InGaAsP薄膜外延层的激光发射。采用二乙烯基四甲基二硅氧烷-苯并环丁烯（DVS-BCB）胶接将InP/InGaAsP外延层集成到波导电路上。光从激光二极管耦合到底层波导使用绝热倒锥方法。利用500 μ m长的激光器将0.9mW的光功率耦合到SOI波导中。除了用作激光二极管外，同一类型的器件还可以用作光电探测器。50 μ m长器件的响应率为0.23A/W。(c) 2006年美国光学学会。
Laser emission from an InP/InGaAsP thin film epitaxial layer bonded to a Silicon-on-Insulator waveguide circuit was observed. Adhesive bonding using divinyl-tetramethyldisiloxane-benzocyclobutene (DVS-BCB) was used to integrate the InP/InGaAsP epitaxial layers onto the waveguide circuit. Light is coupled from the laser diode into an underlying waveguide using an adiabatic inverted taper approach. 0.9mW optical power was coupled into the SOI waveguide using a 500 mu m long laser. Besides for use as a laser diode, the same type of devices can be used as a photodetector. 50 mu m long devices obtained a responsivity of 0.23A/W. (c) 2006 Optical Society of America.