Thermal conduction normal to diamond‐silicon boundaries
Thermal conduction normal to diamond‐silicon boundaries
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DOI：
10.1063/1.113625
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发表时间：
1995-06
影响因子：
4
通讯作者：
K. Goodson;O. Käding;M. Rösner;R. Zachai
中科院分区：
文献类型：
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作者：
K. Goodson;O. Käding;M. Rösner;R. Zachai
采用化学气相沉积技术制备的钝化金刚石层可以改善电子微结构的导热性能。使用钻石的好处很大程度上取决于产生热量的有源半导体区域和钻石之间的热边界电阻。两种独立的实验方法测量了沉积在硅上的厚度分别为0.2、0.5和2.6μm的金刚石层的导热总热阻，为有效的硅-金刚石边界电阻提供了一个上限。这些数据与将钻石中的局部声子散射率与颗粒大小相耦合的预测一致。
Passive diamond layers fabricated using chemical vapor deposition can improve thermal conduction in electronic microstructures. The benefit of using diamond depends strongly on the thermal boundary resistance between active semiconducting regions, where heat is generated, and the diamond. Two independent experimental methods measure the total thermal resistance for conduction normal to 0.2, 0.5, and 2.6 μm thick diamond layers deposited on silicon, providing an upper bound for the effective silicon‐diamond boundary resistance. The data agree with predictions that couple the local phonon scattering rate in the diamond to the grain size.