Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide
Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide
复制标题
DOI：
10.1126/science.1202152
复制
发表时间：
2011-05-27
期刊：
影响因子：
56.9
通讯作者：
Kawasaki, M.
中科院分区：
文献类型：
--
作者：
Yamada, Y.;Ueno, K.;Kawasaki, M.
铁磁半导体中的电场效应可以实现磁化强度的转换，这是自旋电子应用的关键技术。我们用具有高密度电子积累(>；10(14)/平方厘米)的电双层栅控方法，在室温下研究了磁性氧化物半导体(Ti，Co)O(2)的电场感生铁磁性。通过施加几伏特的栅极电压，低载流子顺磁态转变为高载流子铁磁态，从而揭示了电子载流子在高温铁磁性中的重要作用，并展示了一条通往室温半导体自旋电子学的途径。
The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated electric field-induced ferromagnetism at room temperature in a magnetic oxide semiconductor, (Ti,Co)O(2), by means of electric double-layer gating with high-density electron accumulation (>10(14) per square centimeter). By applying a gate voltage of a few volts, a low-carrier paramagnetic state was transformed into a high-carrier ferromagnetic state, thereby revealing the considerable role of electron carriers in high-temperature ferromagnetism and demonstrating a route to room-temperature semiconductor spintronics.