Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature
Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature
复制标题
低磁场%20磁电流%20以上%20200%%20in%20a%20自旋阀%20晶体管%20at%20room%20温度
DOI：
10.1016/s0304-8853(00)00052-4
复制
发表时间：
2000
影响因子：
2.7
通讯作者：
J. Lodder
中科院分区：
文献类型：
--
作者：
P. S. Kumar;R. Jansen;O. V. Erve;R. Vlutters;P. D. Haan;J. Lodder
自旋阀晶体管（SVT），采用热电子显示出巨大的磁输运效应在室温下在小磁场。SVT是一种铁磁-半导体混合结构，其中热电子被注入到NiFe/Au/Co自旋阀中，并通过能量和动量选择在另一侧收集。这使得集电极电流对自旋相关散射极其敏感。该装置的热电子电流输出的变化超过三个因素，在磁场中只有几个Oe，对应于在室温下超过200%的磁流。
A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.