Resonant enhancement of tunneling magnetoresistance in double-barrier magnetic heterostructures
Resonant enhancement of tunneling magnetoresistance in double-barrier magnetic heterostructures
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DOI：
10.1103/physrevlett.89.107205
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发表时间：
2002-09-02
影响因子：
8.6
通讯作者：
Demchenko, DO
中科院分区：
文献类型：
--
作者：
Petukhov, AG;Chantis, AN;Demchenko, DO
我们发现，自旋相关的共振隧穿可以显着提高隧道磁电阻。我们考虑双势垒结构，包括一个半导体量子阱之间的两个绝缘障碍和两个铁磁电极。通过调节量子阱的宽度，最低的共振能级可以移动到少数自旋态密度为零的能量区间。这导致磁阻的极大增强，其表现出作为量子阱宽度的函数的强最大值。我们证明了在GaMnAs/AlAs/GaAs/AlAs/GaMnAs双势垒结构中可以实现超过800%的磁电阻。
We show that spin-dependent resonant tunneling can dramatically enhance tunneling magnetoresistance. We consider double-barrier structures comprising a semiconductor quantum well between two insulating barriers and two ferromagnetic electrodes. By tuning the width of the quantum well, the lowest resonant level can be moved into the energy interval where the density of states for minority spins is zero. This leads to a great enhancement of the magnetoresistance, which exhibits a strong maximum as a function of the quantum well width. We demonstrate that magnetoresistance exceeding 800% is achievable in GaMnAs/AlAs/GaAs/AlAs/GaMnAs double-barrier structures.