Superconductor/semiconductor nanostructures on p-type InAs
Superconductor/semiconductor nanostructures on p-type InAs
复制标题
p 型 InAs 上的超导/半导体纳米结构
DOI：
10.1006/spmi.1999.0719
复制
发表时间：
1999
影响因子：
3.1
通讯作者：
U. Merkt
中科院分区：
文献类型：
--
作者：
A. Chrestin;R. Kürsten;K. Biedermann;T. Matsuyama;U. Merkt
本文综述了Nb/p型InAs/Nb约瑟夫森结的最新实验结果。在这些器件中，超导Nb电极通过p型InAs表面的本征反型层耦合。除了直流和交流约瑟夫森效应，我们讨论了开放的邻近效应引起的能隙的状态密度的反型层，它是由Nb覆盖。在场效应控制器件中，与平均自由程相当的短电极间隔允许在电流-电压特性中观察法布里-珀罗型谐振。
Abstract Recent experimental results for Nb/p-type InAs/Nb Josephson junctions are reviewed. In these devices, the superconducting Nb electrodes are coupled through the native inversion layer at the surface of p-type InAs. Besides the dc and ac Josephson effects, we discuss the opening of a proximity-effect induced energy gap in the density of states of the inversion layer where it is covered by Nb. In field-effect controlled devices, the short electrode separation comparable to the mean free path allows the observation of Fabry–Perot type resonances in the current–voltage characteristics.