Determination of Raman Phonon Strain Shift Coefficient of Strained Silicon and Strained SiGe
Determination of Raman Phonon Strain Shift Coefficient of Strained Silicon and Strained SiGe
复制标题
应变硅和应变SiGe拉曼声子应变位移系数的测定
DOI：
10.1143/jjap.44.7922
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发表时间：
2005
影响因子：
1.5
通讯作者：
Z. Shen
中科院分区：
文献类型：
--
作者：
L. Wong;C. C. Wong;J. Liu;D. Sohn;L. Chan;L. Hsia;H. Zang;Z. Ni;Z. Shen
使用拉曼光谱来表征应变硅和应变硅锗的应变已被广泛接受。要使用拉曼光谱进行定量双轴应变测量，必须知道应变 Si (bSi-SiStSi) 和应变 SiGe (bSi-SiStSiGe) 的 Si-Si 振动的应变位移系数。到目前为止，bSi–SiStSiGe 通常用于计算应变 Si 中的应变，这可能会导致应变值不准确。在这项工作中，我们通过关联高分辨率 X 射线衍射和拉曼光谱首次直接测量 bSi-SiStSi，测量值达到 -784±4 cm-1。我们还表明，SiGe 的应变位移系数 bSi–SiStSiGe 是 Ge 浓度 (x) 的强函数，并且遵循经验关系：b=-773.9-897.7x（x<0.35）。
The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative biaxial strain measurements, the strain shift coefficient for Si–Si vibration from strained Si (bSi–SiStSi) and strained SiGe (bSi–SiStSiGe) must be known. So far, bSi–SiStSiGe is commonly used to calculate strain in strained Si, which may result in inaccurate strain values. In this work, we report the first direct measurement of bSi–SiStSi by correlating high-resolution X-ray diffraction and Raman spectroscopy, which yields a measured value of -784±4 cm-1. We also show that the strain shift coefficient of SiGe, bSi–SiStSiGe, is a strong function of Ge concentration (x), and follows the empirical relation: b=-773.9-897.7x for x<0.35.