Spintronics with multiferroics
Spintronics with multiferroics
复制标题
DOI：
10.1088/0953-8984/20/43/434221
复制
发表时间：
2008-10-29
影响因子：
2.7
通讯作者：
Barthelemy, A.
中科院分区：
文献类型：
--
作者：
Bea, H.;Gajek, M.;Barthelemy, A.
本文综述了多铁性材料功能化在自旋电子学中的应用。我们更特别地专注于反铁磁和铁电BiFeO3及其集成在几种类型的架构。例如，当用作隧道势垒时，BiFeO3允许观察具有Co和（La，Sr）MnO3铁磁电极的大隧道磁阻。此外，它的反铁磁和磁电性质已被利用，以诱导与铁磁体的交换耦合。这种交换耦合的机制为电控制自旋电子器件的磁化强度以及可能的逻辑状态开辟了道路。我们还讨论了最近的结果有关使用铁磁和铁电（La，Bi）MnO 3作为一个积极的隧道势垒在磁性隧道结与Au和（La，Sr）MnO 3电极。一个四电阻状态的设备已获得，与两个国家所产生的自旋过滤效应，由于铁磁特性的障碍和两个所产生的铁电行为的（La，Bi）MnO_3薄膜。这些结果表明，由铁电极化提供的额外的自由度带来了新的功能，自旋电子学，无论是作为一个额外的有序参数的多状态存储器元件，或作为一个处理的门控磁存储器。
In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO3 allows the observation of a large tunnel magnetoresistance with Co and (La, Sr) MnO3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La, Bi) MnO3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La, Sr) MnO3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La, Bi) MnO3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.