HVPE Growth and Characterization of Thick κ-Ga2O3 Layers on GaN/Sapphire Templates
HVPE Growth and Characterization of Thick κ-Ga2O3 Layers on GaN/Sapphire Templates
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GaN/蓝宝石模板上厚 κ-Ga2O3 层的 HVPE 生长和表征
DOI：
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发表时间：
2023
影响因子：
2.2
通讯作者：
S. Pearton
中科院分区：
文献类型：
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作者：
S. Stepanov;V. Nikolaev;A. Polyakov;A. Pechnikov;E. Yakimov;M. Scheglov;I. Schemerov;A. Vasilev;Anastasiya Kochkova;A. Chernykh;A. Chikiryaka;P. Butenko;S. Pearton
在 570°C 的热壁反应器中，通过卤化物气相外延 (HVPE) 在 GaN(0001)/蓝宝石模板上生长厚度为 10 至 86 µm 的 Ga2O3 层，生长速率约为 3-4 µm/h。生长的层由纯 (001) 取向的 κ-Ga2O3 多晶型物组成，不混合 β-Ga2O3 或 α-Ga2O3 相。对于 13-20 µm 厚的 κ-Ga2O3 层，观察到最窄的 (004) X 射线摇摆曲线。厚度的进一步增加会导致晶体质量的恶化，这通过摇摆曲线的加宽来表明。厚层的电学测量表明它们是 n 型的，浅层供体的浓度从 ~1016 cm-3 逐渐降低到 ~1015 cm-3。深能级瞬态光谱（DLTS）测量揭示了深陷阱的存在，其能级接近Ec-0.3 eV、Ec-0.6 eV、Ec-0.7 eV、Ec-0.8 eV、Ec-1 eV，其中Ec-0.8 eV占主导地位。
Ga2O3 layers with thickness from 10 to 86 µm were grown by halide vapor phase epitaxy (HVPE) on GaN(0001)/sapphire templates in a hot wall reactor at 570°C, with the growth rate of about 3‑4 μm/h. The grown layers consisted of pure (001)-oriented κ-Ga2O3 polymorph with no admixture of β-Ga2O3 or α-Ga2O3 phases. The narrowest (004) x-ray rocking curves were observed for 13-20 µm thick κ-Ga2O3 layers. A further increase in thickness results in deterioration of the crystal quality which is indicated by the broadening of rocking curves. Electrical measurements of the thick layers revealed that they were n-type, with the concentration of shallow donors gradually decreasing from ~1016 cm-3 to ~1015 cm‑3. Deep level transient spectroscopy (DLTS) measurements revealed the presence of deep traps with levels near Ec-0.3 eV, Ec-0.6 eV, Ec-0.7 eV, Ec-0.8 eV, Ec-1 eV, with the Ec-0.8 eV being predominant.