The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si schottky diodes
The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si schottky diodes
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DOI：
10.1016/j.apsusc.2005.03.122
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发表时间：
2005-12
影响因子：
6.7
通讯作者：
H. Kanbur;Ş. Altındal;A. Tataroğlu
中科院分区：
文献类型：
--
作者：
H. Kanbur;Ş. Altındal;A. Tataroğlu
The current–voltage (I–V) characteristics of Al/SiO2/p-Si metal–insulator–semiconductor (MIS) Schottky diodes were measured at room temperature. In addition the capacitance–voltage (C–V) and conductance–voltage (G–V) measurements are studied at frequency range of 10kHz–1MHz. The higher value of ideality factor of 3.25 was attributed to the presence of an interfacial insulator layer between metal and semiconductor and the high density of interface states localized at Si/SiO2interface. The density of interface states (Nss) distribution profile as a function of (Ess−Ev) was extracted from the forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (Φe) at room temperature for the Schottky diode on the order of ≅4×1013eV−1cm−2.These high values of Nsswere responsible for the non-ideal behaviour of I–V and C–V characteristics. Frequency dispersion in C–V and G–V can be interpreted only in terms of interface states. The Nsscan follow the ac signal especially at low frequencies and yield an excess capacitance. Experimental results show that the I–V, C–V and G–V characteristics of SD are affected not only in Nssbut also in series resistance (Rs), and the location of Nssand Rshas a significant on electrical characteristics of Schottky diodes.
