Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC
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DOI：
10.1016/j.actamat.2021.116746
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发表时间：
2021-03-04
期刊：
影响因子：
9.4
通讯作者：
Ujihara, Toru
中科院分区：
文献类型：
--
作者：
Fujie, Fumihiro;Peng, Hongyu;Ujihara, Toru
研究了同轴4 H-SiC晶片中螺旋型基面位错（BPD）的同步辐射X射线形貌像的衬度特征。螺钉BPD图像分为两种类型：一种显示由黑线包围的白色线，另一种显示纯黑线对比。离轴试样的类似图像和相应的光线跟踪模拟表明，这些对比度可以归因于晶体表面以下的螺旋BPD的深度。模拟和螺杆BPD形貌图像之间的对比度特征的相关性可用于估计深度。(C)2021 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
The contrast features of synchrotron X-ray topographic images of screw-type basal plane dislocations (BPDs) in on-axis 4H-SiC wafers have been studied. Screw BPD images are categorized into two types: one exhibiting a white line bordered by black lines and the other a pure black line contrast. Similar images for off-axis specimens and the corresponding ray-tracing simulations demonstrate that these contrasts can be attributed to the depth of the screw BPDs below the crystal surface. The correlation of the contrast features between simulations and the screw BPD topography images can be used to estimate the depth. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.