Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy
Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy
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金属有机气相外延过程中双扩散前沿无意从掺锌 InP 层穿透的控制
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
F. Toujou
中科院分区：
文献类型：
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作者：
N. Otsuka;M. Kito;M. Ishino;Y. Matsui;F. Toujou
金属有机气相外延过程中锌的非故意扩散会对半导体器件造成严重的破坏。在这项工作中，通过二次离子质谱法测量了在p-InP层生长过程中无意中从p-InP层扩散到相邻的InP衬底的Zn原子的剖面。研究了由高Zn浓度的浅锋和低Zn浓度的深锋组成的双扩散锋的Zn扩散曲线，作为控制非故意扩散的方法。控制各锋面的扩散深度与锌用量成比例，建议采用锌浓度计算值，不考虑饱和极限。当生长温度为600℃时，60 min的扩散深度随Zn用量的增加而增大，浅锋的斜率为0.16 μm/1018 cm−3，深锋的斜率为0.32 μm/1018 cm−3。深锋的扩张速度是浅锋的两倍，这是正常的……
Unintentional Zn diffusion during metalorganic vapor phase epitaxy causes serious damages in semiconductor devices. In this work, profiles of unintentionally diffused Zn atoms from a p-InP layer to the adjoining InP substrate during growth of the p-InP layer are measured by secondary ion mass spectrometry. Zn diffusion profiles with a double diffusion front, which is composed of a shallow front with high Zn concentration and a deep front with low Zn concentration, are investigated as an approach to controlling unintentional diffusion. Diffusion depth of each front is controlled in proportion to Zn dosage, which is proposed as a value calculated as Zn concentration without regard to saturation limit. The diffusion depth for the growth time of 60 min increases in proportion to the Zn dosage as the slope of 0.16 μm/1018 cm−3 for the shallow front and that of 0.32 μm/1018 cm−3 for the deep front at a growth temperature of 600 °C. The deep front expands two times faster than the shallow front, which is normall...