Improving photoelectrochemical response of ZnO nanowire arrays by coating with p-type ZnOresembling metal- organic framework
Improving photoelectrochemical response of ZnO nanowire arrays by coating with p-type ZnOresembling metal- organic framework
复制标题
通过涂覆类似金属有机骨架的 p 型 ZnO 提高 ZnO 纳米线阵列的光电化学响应
DOI：
10.1039/c9dt01490j
复制
发表时间：
2019
影响因子：
4
通讯作者：
Yang Yang
中科院分区：
文献类型：
--
作者：
Qianqian Gao;Huihui Kang;Yun Cai;Daxiang Xue;Fengjiao Yu;Jun Fang;Yang Yang
将半导体金属有机骨架(MOF)与金属氧化物(MO)半导体纳米线偶联是调节两者光电性能的有效途径。在这份报告中，我们展示了一种简单的无表面活性剂生长策略，用于用MOF乙醇酸锌(称为锌-GA)修饰氧化锌(ZnO)单晶纳米线阵列(NWAS)，该MOF乙醇酸锌包含一个嵌入的连续的3D锌-O网络。由于锌-镓和氧化锌之间的锌氧网络结构相似，所制备的氧化锌@锌-镓纳米线在核-壳界面以部分外延的方式紧密接触，并且在合成过程中锌-镓的负载量可以很好地控制。Mott-Schottky分析证实，p型锌镓与广泛使用的n型氧化锌相结合，保证了在核壳界面形成串联的n-p异质结。通过将ZnO@Zn-GA作为光阳极对水和草酸进行光电化学氧化，获得了相对于一次氧化锌NWAs更好的光电流响应。在具有最大结区的致密锌镓颗粒薄膜包裹的氧化锌纳米线中，观察到了最显著的光响应。这些结果被光生载流子空间分离效率的提高所解释，这是由n-p异质结界面上的内置电场所有利于的。
Coupling semiconducting metal–organic frameworks (MOFs) with metal oxide (MO) semiconductor nanowires is an efficient solution to tune the photoelectric properties of both the parties. In this report, we demonstrate a facile surfactant-free growth strategy for modification of zinc oxide (ZnO) single-crystal nanowire arrays (NWAs) with the MOF zinc glycolate (noted as Zn-GA) that contains an embedded continuous 3D Zn–O network. Due to the structural resemblance of the Zn–O network between Zn-GA and ZnO, the prepared ZnO@Zn-GA nanowires present a tight contact at the core–shell interface in a partially epitaxial manner, and the loading amount of Zn-GA can be well controlled in the synthetic process. The inherent p-type Zn-GA in combination with the widely available n-type ZnO assures the construction of tandem n–p heterojunctions at the core–shell interface, which is confirmed by Mott–Schottky analysis. By implementation of the ZnO@Zn-GA NWAs as photoanodes for photoelectrochemical oxidation of water and oxalic acid, improved photocurrent responses are obtained relative to the primary ZnO NWAs. The most significant photoresponse is observed in the ZnO nanowires shelled by a compact Zn-GA particulate thin film with the largest junction region. These results are elucidated by the enhanced spatial separation efficiency of photogenerated charge carriers, which is favored by the built-in electric field at the interface of the n–p heterojunctions.