Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging
Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging
复制标题
采用双面封装的低热阻 (0.5 K/W) Ga-O-肖特基整流器
DOI：
10.1109/led.2021.3089035
复制
发表时间：
2021
影响因子：
4.9
通讯作者：
Zhang, Yuhao
中科院分区：
文献类型：
--
作者：
Wang, Boyan;Xiao, Ming;Knoll, Jack;Buttay, Cyril;Sasaki, Kohei;Lu, Guo-Quan;Dimarino, Christina;Zhang, Yuhao
Ga 2 O3的低热导率可以说是Ga 2 O3功率和RF器件最严重的问题。尽管有许多模拟研究，有没有大面积的封装Ga 2 O3器件的热阻的实验报告。本工作通过演示15 A双面封装Ga 2 O3肖特基势垒二极管（SBD）并测量其在底侧和结侧冷却配置下的结-壳热阻（RθJC）来填补这一空白。Rθ JC表征基于瞬态双界面方法，即，JEDEC 51-14标准。结冷和底冷Ga 2 O3 SBD的Rθ JC分别为0.5K/W和1.43K/W，前者的Rθ JC低于同类商用SiC SBD。这种低的Rθ JC可归因于直接从肖特基结而不是通过Ga 2 O3芯片的热提取。比商用SiC器件的Rθ JC低，证明了Ga 2 O3器件在大功率应用中的可行性，并表明了适当封装对其热管理的重要性。
The low thermal conductivity of Ga2O3has arguably been the most serious concern for Ga2O3power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga2O3device. This work fills this gap by demonstrating a 15-A double-side packaged Ga2O3Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance ( RθJC) in the bottom-side- and junction-side-cooling configurations. The RθJCcharacterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The RθJCof the junction- and bottom-cooled Ga2O3SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former RθJClower than that of similarly-rated commercial SiC SBDs. This low RθJCis attributable to the heat extraction directly from the Schottky junction instead of through the Ga2O3chip. The RθJClower than that of commercial SiC devices proves the viability of Ga2O3devices for high-power applications and manifest the significance of proper packaging for their thermal management.