Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation
Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation
复制标题
高能分辨率光电子能谱表征 4H-SiC 外延 (0001´) 面上的氧化膜：湿式氧化与干式氧化的比较
DOI：
10.1063/1.2345471
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
T. Hattori
中科院分区：
文献类型：
--
作者：
Y. Hijikata;H. Yaguchi;S. Yoshida;Y. Takata;Keisuke L. I. Kobayashi;H. Nohira;T. Hattori
湿氧化膜和干氧化膜-4 H-SiC外延（0001 <$）C面界面已通过电容-电压（C-V）测量和使用同步辐射的软X射线激发光电子能谱（SX-PES）和硬X射线激发光电子能谱（HX-PES）表征。在任何能级上，湿氧化的界面态密度都比干氧化的小得多。在PES测量中，观察到中间氧化态如Si 1+和Si 3+。此外，这些状态的面密度被发现是在一个很好的对应关系的界面态。根据SX-PES和HX-PES的氧化膜深度分布，讨论了湿法氧化制备的金属氧化物半导体器件具有良好电特性的原因。
Wet and dry oxide films-4H-SiC epitaxial (0001¯) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results.