Effect of orientation on the dielectric and piezoelectric properties of 0.2Pb(Mg1/3Nb2/3)O3–0.8Pb(Zr0.5Ti0.5)O3 thin films
Effect of orientation on the dielectric and piezoelectric properties of 0.2Pb(Mg1/3Nb2/3)O3–0.8Pb(Zr0.5Ti0.5)O3 thin films
复制标题
DOI：
10.1063/1.1394947
复制
发表时间：
2001-08
影响因子：
4
通讯作者：
K. Yoon;B. D. Lee;Jihoon Park
中科院分区：
文献类型：
--
作者：
K. Yoon;B. D. Lee;Jihoon Park
采用溶胶-凝胶法在Pt（111）/Ti/SiO2/Si [Pt（111）]和Pt（200）/SiO2/Si [Pt（200）]衬底上制备了0.2Pb（Mg 1/3 Nb 2/3）O3-0.8Pb（Zr0.5Ti0.5）O3（0.2PMN-0.8PZT）薄膜，研究了取向对0.2PMN-0.8PZT薄膜压电和介电性能的影响。在Pt（111）和Pt（200）衬底上制备的0.2PMN-0.8PZT薄膜分别具有较强的（111）和（100）择优取向。（111）取向膜的自发极化强度高于（100）取向膜。然而，（100）取向的膜显示出比（111）取向的膜更高的介电常数（K）和横向压电系数（d31）。由于（100）取向膜的自发极化方向比（111）取向膜的自发极化方向更偏离膜表面的法线，因此（100）取向膜的介电常数和横向压电系数（d31）提高。
0.2Pb(Mg1/3Nb2/3)O3–0.8Pb(Zr0.5Ti0.5)O3 (0.2PMN–0.8PZT) thin films were deposited on Pt(111)/Ti/SiO2/Si [Pt(111)] and Pt(200)/SiO2/Si [Pt(200)] substrates by a sol–gel method, and the effect of orientation on the piezoelectric and dielectric properties of 0.2PMN–0.8PZT thin films was investigated. The 0.2PMN–0.8PZT thin films on Pt(111) and Pt(200) showed strong (111) and (100) preferred orientations, respectively. The spontaneous polarization of the (111) oriented film was higher than that of the (100) oriented film. However, the (100) oriented film showed a higher dielectric constant (K) and transverse piezoelectric coefficients (d31) than the (111) oriented film. Because the spontaneous polarization direction of the (100) oriented film is more tilted away from the normal to the film surface than that of the (111) oriented film, the dielectric constant and the transverse piezoelectric coefficient (d31) of the (100) oriented film were enhanced.