A 0.18-μm CMOS capacitive sensor lab-on-chip
A 0.18-μm CMOS capacitive sensor lab-on-chip
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DOI：
10.1016/j.sna.2007.10.007
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发表时间：
2008-02-15
影响因子：
4.6
通讯作者：
Therriault, Daniel
中科院分区：
文献类型：
--
作者：
Ghafar-Zadeh, Ebrahim;Sawan, Mohamad;Therriault, Daniel
本文采用基于电荷的电容测量（CBCM）方法，提出了一种适用于芯片实验室的电容式传感器。这种简单而高灵敏度的电容式传感器是在TSMC 0.18 CMOS工艺中实现的，我们将微流体结构用于化学传感。本文还报道了布局后的仿真、制作和初步的片上实验室测试结果。(c) 2007 Elsevier B.V.版权所有
In this paper, we put forward a capacitive sensor for Lab-on-Chip applications using a charge-based capacitance measurement (CBCM) method. This simple and highly sensitive capacitive sensor is implemented in the TSMC 0.18 CMOS process to which we incorporate microfluidic structures for chemical sensing. The post-layout simulation, fabrication and preliminary Lab-on-Chip testing results are also reported. (c) 2007 Elsevier B.V. All rights reserved.