A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT
A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT
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DOI：
10.1109/led.2014.2334394
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发表时间：
2014-07
影响因子：
4.9
通讯作者：
R. Brown;D. Macfarlane;A. Al-Khalidi;Xu Li;G. Ternent;Haiping Zhou;I. Thayne;E. Wasige
中科院分区：
文献类型：
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作者：
R. Brown;D. Macfarlane;A. Al-Khalidi;Xu Li;G. Ternent;Haiping Zhou;I. Thayne;E. Wasige
提出了一种新的高性能常关型氮化镓（GaN）基金属氧化物半导体高电子迁移率晶体管，该晶体管采用亚临界3 nm厚的氮化铝镓（Al0.25Ga0.75N）阻挡层，并依赖于诱导的二维电子气进行操作。使用10和20 nm等离子体增强化学气相沉积二氧化硅（SiO2）作为栅极电介质的单指器件。它们的阈值电压（Vth）分别为3 V和2 V，在栅极电压（VGS）为6 V时，最大漏极电流（IDSmax）分别超过450 mA/mm和650 mA/mm。所提出的器件被视为未来电力电子器件的构建模块，特别是作为采用GaN基增强模式和耗尽模式器件的共源共栅配置中的驱动器件。
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (Vth) of 3 and 2 V, and very high maximum drain currents (IDSmax) of over 450 and 650 mA/mm, at a gate voltage (VGS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.