Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering
Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering
复制标题
磁控溅射InxAl1-xN纳米点定向生长的参数研究
DOI：
10.1016/j.mssp.2019.104583
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发表时间：
2019
影响因子：
4.1
通讯作者：
Fan Yang
中科院分区：
文献类型：
--
作者：
Yang Zhao;Hui Wang;Xinzhong Li;Jingjie Li;Zhifeng Shi;Guoguang Wu;Shiwei Zhuang;Chuanlei Yin;Fan Yang
InxAl1-xN合金在光电器件应用中具有巨大的潜力。然而，高质量InxAl1-xN合金的合成仍然是一个难点。本文报道了用射频磁控溅射在al2o3衬底上生长InxAl1-xN合金。采用x射线衍射、扫描电镜和x射线光电子能谱研究了氮浓度、衬底温度和生长时间等沉积条件对InxAl1-xN合金结构和形貌的影响。结果表明：在较低氮浓度（20%）和较高衬底温度（500 °C）下生长的InxAl1-xN合金出现相分离现象；研究发现，随着衬底温度从室温升高到500 ℃，InxAl1-xN合金的表面形貌由均匀的纳米点向无序的纳米团簇转变。最后，在氮浓度为40%、衬底温度为300 °C、生长时间为120 min的条件下，获得了取向良好的In0·62Al0·38N纳米点。相信本研究将为制备高质量的InAlN合金奠定良好的基础，并可用于可靠的光电器件。
InxAl1-xN alloys are expected to have immense potential in optoelectronic device applications. However, the synthesis of high quality InxAl1-xN alloys still remain a difficulty. Herein, we report the growth of InxAl1-xN alloys on Al2O3substrate by radio-frequency magnetron sputtering. The deposition conditions such as nitrogen concentration, substrate temperature and growth time affect the structural and morphological properties of InxAl1-xN alloys, which were investigated using X-ray diffraction, scanning electron microscope and X-ray photoelectron spectroscopy. The results showed that the InxAl1-xN alloys grown at lower nitrogen concentration (20%) and higher substrate temperature (500 °C) exhibited phase separation. It was found that the surface morphology of InxAl1-xN alloys presented a transition from uniform nanodots to disordered nanoclusters with the substrate temperature increased from room temperature to 500 °C. Finally, well-oriented In0·62Al0·38N nanodots were achieved at a nitrogen concentration of 40%, a substrate temperature of 300 °C, and a growth time of 120 min. It was believed that this research will lay a good foundation for the preparation of high-quality InAlN alloys that can be employed in reliable optoelectronic devices.