Direct insights into RbInSe2 formation at Cu(In,Ga)Se2 thin film surface with RbF postdeposition treatment
Direct insights into RbInSe2 formation at Cu(In,Ga)Se2 thin film surface with RbF postdeposition treatment
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DOI：
10.1063/1.5044244
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发表时间：
2018-09
影响因子：
4
通讯作者：
N. Taguchi;Shingo Tanaka;S. Ishizuka
中科院分区：
文献类型：
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作者：
N. Taguchi;Shingo Tanaka;S. Ishizuka
通过扫描透射电子显微镜和能量色散x射线能谱对RbF沉积后处理（RbF- pdt）生长的Cu(In,Ga)Se2 （CIGS）薄膜器件进行了测量，发现在p-CIGS/n-CdS异质界面上形成了RbInSe2化合物。然而，这种类型的rb -化合物的形成是没有观察到的元素无in三元CuGaSe2 （CGS）器件。用RbF-PDT生长的CIGS膜表面是贫ga的；因此，实际的接口结构是CIGS/(CuInSe2, RbInSe2)/CdS。与RbF-PDT在含In的CIGS光伏器件性能上的显著改善相比，到目前为止，在无In的CGS器件中还没有观察到显著的改善。这些结果表明，元素In的存在在获得有益的碱Rb效应以提高器件性能和RbF-PDT表面改性方面起着关键作用。通过扫描透射电子显微镜和能量色散x射线能谱对RbF沉积后处理（RbF- pdt）生长的Cu(In,Ga)Se2 （CIGS）薄膜器件进行了测量，发现在p-CIGS/n-CdS异质界面上形成了RbInSe2化合物。然而，这种类型的rb -化合物的形成是没有观察到的元素无in三元CuGaSe2 （CGS）器件。用RbF-PDT生长的CIGS膜表面是贫ga的；因此，实际的接口结构是CIGS/(CuInSe2, RbInSe2)/CdS。与RbF-PDT在含In的CIGS光伏器件性能上的显著改善相比，到目前为止，在无In的CGS器件中还没有观察到显著的改善。这些结果表明，元素In的存在在获得有益的碱Rb效应以提高器件性能和RbF-PDT表面改性方面起着关键作用。
Scanning transmission electron microscopy-energy dispersive X-ray spectroscopy measurements performed on Cu(In,Ga)Se2 (CIGS) thin-film devices grown with RbF postdeposition treatment (RbF-PDT) revealed the formation of a RbInSe2 compound at the p-CIGS/n-CdS heterointerface. However, this type of Rb-compound formation was not observed with elemental In-free ternary CuGaSe2 (CGS) devices. The film surface of CIGS grown with RbF-PDT was found to be Ga-depleted; thus, the practical interface structure turned out to be CIGS/(CuInSe2, RbInSe2)/CdS. In contrast to the significant improvements observed in In-containing CIGS photovoltaic device performance with RbF-PDT, no significant improvements have been observed in In-free CGS devices thus far. These results suggest that the presence of elemental In plays a key role in obtaining beneficial alkali Rb effects for enhancing device performance as well as surface modification with RbF-PDT.Scanning transmission electron microscopy-energy dispersive X-ray spectroscopy measurements performed on Cu(In,Ga)Se2 (CIGS) thin-film devices grown with RbF postdeposition treatment (RbF-PDT) revealed the formation of a RbInSe2 compound at the p-CIGS/n-CdS heterointerface. However, this type of Rb-compound formation was not observed with elemental In-free ternary CuGaSe2 (CGS) devices. The film surface of CIGS grown with RbF-PDT was found to be Ga-depleted; thus, the practical interface structure turned out to be CIGS/(CuInSe2, RbInSe2)/CdS. In contrast to the significant improvements observed in In-containing CIGS photovoltaic device performance with RbF-PDT, no significant improvements have been observed in In-free CGS devices thus far. These results suggest that the presence of elemental In plays a key role in obtaining beneficial alkali Rb effects for enhancing device performance as well as surface modification with RbF-PDT.