Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
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DOI：
10.1038/nmat1099
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发表时间：
2004-04-01
期刊：
影响因子：
41.2
通讯作者：
Kawasaki, M
中科院分区：
文献类型：
--
作者：
Toyosaki, H;Fukumura, T;Kawasaki, M
铁磁半导体被认为适合于未来的自旋电子学，因为电荷和自旋自由度（1，2）都可以通过外部刺激来操纵。铁磁半导体最重要的特性之一是反常霍尔效应。这是因为铁磁自旋极化的载流子可以被探测和电控制，从而直接应用于电子学。利用III-V族铁磁半导体的反常霍尔效应，已经成功地实现了由电场控制居里温度（3）和磁化方向（4）以及光致铁磁性（5）。在这些情况下，工作温度远低于室温，因为有限的居里温度低于160 K（参考文献6）。在这里，我们报告的异常霍尔效应所支配的电子掺杂在室温下透明的铁磁半导体，金红石Ti 1-xCoxO 2-δ（氧缺乏三角洲）。这一结果表明，在这种化合物的铁磁性的内在本质，并代表了透明的半导体自旋电子器件在室温下可操作的可能实现。
Ferromagnetic semiconductors are believed to be suitable for future spintronics, because both charge and spin degrees of freedom(1,2) can be manipulated by external stimuli. One of the most important characteristics of ferromagnetic semiconductors is the anomalous Hall effect. This is because the ferromagnetically spin-polarized carrier can be probed and controlled electrically, leading to direct application for electronics. Control of the Curie temperature(3) and magnetization direction(4) by electronic field, and photo-induced ferromagnetism(5) have been performed successfully using the anomalous Hall effect for group III-V ferromagnetic semiconductors. In these cases, the operation temperature was much below room temperature because of the limited Curie temperature of less than 160 K (ref. 6). Here, we report on the anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor, rutile Ti1-xCoxO2-delta(of oxygen deficiency delta). This result manifests the intrinsic nature of ferromagnetism in this compound, and represents the possible realization of transparent semiconductor spintronics devices operable at room temperature.