Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz
Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz
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DOI：
10.1109/tthz.2012.2183740
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发表时间：
2012-03-01
影响因子：
3.2
通讯作者：
Siegel, Peter
中科院分区：
文献类型：
--
作者：
Maestrini, Alain;Mehdi, Imran;Siegel, Peter
我们报道了一种全固态频率捷变电源的设计、制造和测试，该电源在室温下可在2.48-2.75太赫兹频段产生超过1微瓦(-30 dBm)的功率。这种倍频信号源由一个W波段合成器、一个提供350-450 mW(25.5-26.5 dBm)的功率放大器和三个平衡频率三倍频器级联驱动。第一级三倍频基于四个功率合成的六阳极GaAs肖特基二极管器件，第二级三倍频基于两个四阳极GaAs三倍频器件。输出三倍频采用单个无偏置器件，将两个阳极单片集成在一层薄的砷化镓薄膜上。该源在室温下以2.58太赫兹的频率提供了创纪录的18微瓦(-17.5 dBm)。用傅里叶变换光谱仪(FTS)对该倍频源进行了分析，发现不需要的谐波比期望信号至少低29d B。当这个源被用作热电子测辐射热计混合器的本地振荡器时，将使未来太空任务的外差仪器能够绘制具有宇宙学意义的2.675太赫兹高清分子线。
We report on the design, fabrication and test of an all-solid-state, frequency agile source that produces over 1 mu W (-30 dBm) across the 2.48-2.75 THz band at room temperature. This frequency-multiplied source is driven by a W-band synthesizer followed by a power amplifier that delivers 350-450 mW (25.5-26.5 dBm) and a cascade of three balanced frequency triplers. The first stage tripler is based on four power-combined six-anode GaAs Schottky diode devices, and the second stage tripler is based on two four-anode GaAs devices. The output tripler uses a single unbiased device featuring two anodes monolithically integrated onto a thin GaAs membrane. The source delivers a record 18 mu W (-17.5 dBm) at 2.58 THz at room temperature. This frequency multiplied source is analyzed with a Fourier transform spectrometer (FTS) and the unwanted harmonics are found to be at least 29 dB below the desired signal. This source, when used as the local oscillator for a hot-electron bolometer mixer, will enable heterodyne instruments for future space missions to map the cosmologically-important 2.675 THz HD molecular line.