Influence of substrate polarity on growth of InN films by RF‐MBE
Influence of substrate polarity on growth of InN films by RF‐MBE
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衬底极性对 RF-MBE 生长 InN 薄膜的影响
DOI：
10.1002/pssc.200303532
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Y. Nanishi
中科院分区：
文献类型：
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作者：
Fumie Matsuda;Y. Saito;T. Muramatsu;T. Yamaguchi;Yuriko Matsuo;A. Koukitu;T. Araki;Y. Nanishi
我们用RF-MBE研究了衬底极性对InN薄膜生长的影响。结果表明，成功生长InN所需的温度与衬底极性密切相关。550℃时，在C面SiC上可以生长出InN，而在si面SiC上没有生长出InN。在较低的450℃温度下，在Si-face SiC上实现了InN的生长。在独立GaN衬底上生长的情况下，InN可以在550°C的n面GaN上生长，而InN在450°C的ga面GaN上生长。结果表明，N极性的InN比In极性的InN生长温度更高。这些结果表明极性的控制是成功生长的关键。
We have investigated influence of substrate polarity on the growth of InN films by RF-MBE. It was found that the temperature required for successful growth of InN strongly depended on the substrate polarity. InN could be grown on C-face SiC at 550 °C, whereas no InN growth occurred on Si-face SiC at 550 °C. InN growth on Si-face SiC was realized at lower temperature of 450 °C. In the case of the growth on free-standing GaN substrates, InN could be grown on N-face GaN at 550 °C, whereas InN growth on Ga-face GaN was realized at 450 °C. It was found that InN with N polarity can be grown at higher temperature than that with In polarity. These results indicate that control of polarity is essential for successful growth of InN.