High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.
High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.
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DOI：
10.1021/nl403561w
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发表时间：
2013-12
期刊：
影响因子：
10.8
通讯作者：
S. Funk;M. Royo;I. Zardo;D. Rudolph;S. Morkötter;B. Mayer;J. Becker;A. Bechtold;S. Matich;M. Döblinger;M. Bichler;G. Koblmüller;J. Finley;A. Bertoni;G. Goldoni;G. Abstreiter
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文献类型：
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作者：
S. Funk;M. Royo;I. Zardo;D. Rudolph;S. Morkötter;B. Mayer;J. Becker;A. Bechtold;S. Matich;M. Döblinger;M. Bichler;G. Koblmüller;J. Finley;A. Bertoni;G. Goldoni;G. Abstreiter
独立的半导体纳米线与先进的栅极结构相结合，在未来的集成电路中作为小型化的构建模块具有特殊的前景。然而，半导体纳米线经常被增加的邻近表面状态破坏，这对于它们的光学和电子性质是有害的。这种概念上的挑战阻碍了它们在高速电子学中的潜力，因此需要新的概念来提高载流子迁移率。我们已经介绍了一种新型的核壳纳米线异质结构，将调制或远程掺杂，因此可能会导致高迁移率的电子。我们证明了这些概念的有效性，使用非弹性光散射研究单一调制掺杂的GaAs/Al 0.16Ga 0.84As核-多壳纳米线生长在硅上。我们得出结论，从一个详细的实验研究和理论分析所观察到的自旋和电荷密度的波动，一维和二维的电子通道中形成的GaAs同轴量子阱空间分离的施主离子。总载流子密度约为3 × 10（7）cm（-1），电子迁移率约为50，000 cm（2）/（Vs）。单个GaAs/Al 0.16 Ga 0.84 As核多壳纳米线的空间映射显示沿沿着线的不均匀性质可能与结构缺陷。这种明确的1D和2D电子通道以及这些先进的基于锗的量子异质结构中各自的电荷载流子特性的第一次演示是各种新型纳米电子和光子器件的基础。
Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core-shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 10(7) cm(-1) and an electron mobility in the order of 50,000 cm(2)/(V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core-multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2D-electron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.