Recycling of SiCl4 in the manufacture of granular polysilicon in a fluidized bed reactor
Recycling of SiCl4 in the manufacture of granular polysilicon in a fluidized bed reactor
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DOI：
10.1016/j.cej.2013.01.001
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发表时间：
2013-03-15
影响因子：
15.1
通讯作者：
Wang, Zhanwen
中科院分区：
文献类型：
--
作者：
Wang, Chenjing;Wang, Tiefeng;Wang, Zhanwen
研究了以三氯硅烷(SiHCl3)和四氯化硅(SiCl4)为原料，采用化学气相沉积(CVD)法制备多晶硅颗粒的方法。研究了反应温度(800-1200℃)、H-2与SiHCl3和SiCl4的摩尔比以及SiHCl3和SiCl4混合物中SiHCl3的含量(0-100%)对反应的影响。用气相色谱(GC)对反应气体进行分析。用扫描电子显微镜对产物颗粒的表面形貌进行了分析。得到了生长良好的产物颗粒。反应温度和反应物组成对硅产率和每公斤沉积硅产生SiCl4的量有显著影响。结果表明，在反应器中使用SiHCl3和SiCl4的混合物作为反应物，可以实现SiCl4的零净副产，同时保持了令人满意的硅产率。适宜的反应条件为1200℃，H-2/SiHCl3/SiCl4的摩尔比为16/0.5/0.5。相应的单程SiHCl3转化率和硅产率分别为21.1%和9.6%，高于采用纯SiHCl3改进的西门子工艺。(C)2013爱思唯尔B.V.保留所有权利。
A process that used chemical vapor deposition (CVD) from the mixture of trichlorosilane (SiHCl3) and silicon tetrachloride (SiCl4) for the production of polysilicon granules in a fluidized bed reactor (FBR) was studied. The effects of the reaction temperature (800-1200 degrees C), molar ratio of H-2 to SiHCl3 and SiCl4, and SiHCl3 fraction in the mixture of SiHCl3 and SiCl4 (0-100%) were studied. The reactant gas was analyzed by a gas chromatography (GC). The surface morphology of the product particles were analyzed by scanning electron microscopy. Well grown product particles were obtained. The reaction temperature and reactant composition significantly affected the Si yield and the amount of produced SiCl4 per kg deposited Si. The results showed that zero net by-production of SiCl4 could be realized by using the mixture of SiHCl3 and SiCl4 as reactant in a FBR while a satisfactory Si yield was remained. A suitable reaction condition for this was 1200 degrees C and molar ratio H-2/SiHCl3/SiCl4 was 16/0.5/0.5. The corresponding one-through SiHCl3 conversion and Si yield were 21.1% and 9.6%, respectively, which were higher than the improved Siemens technology using pure SiHCl3. (C) 2013 Elsevier B.V. All rights reserved.