Damage profiling of Ar+ sputtered Si(100) surface by medium energy ion scattering spectroscopy
Damage profiling of Ar+ sputtered Si(100) surface by medium energy ion scattering spectroscopy
复制标题
中能离子散射光谱法对 Ar 溅射 Si(100) 表面进行损伤分析
DOI：
10.1016/0169-4332(96)00264-4
复制
发表时间：
1996
影响因子：
6.7
通讯作者：
D. Moon
中科院分区：
文献类型：
--
作者：
Jisun Lee;C. S. Jeong;Hyun;Hanchul Kim;D. Moon
为了研究由于离子轰击作为离子剂量和离子入射角对损伤分布的影响的函数的损伤分布的发展，MEIS光谱取自清洁的Si表面和离子束溅射的Si表面。MEIS分析表明，3 keV Ar+离子轰击Si（100）表面后，表面层开始变为非晶，非晶层逐渐增厚。当注入剂量为3 × 1016 ion/cm 2，入射角为35°时，Si（100）的损伤轮廓达到饱和。在饱和离子剂量下，损伤层深度为9.6nm。损伤层深度从表面法线处的14.2nm显著减小到80°入射时的4.8nm。在掠射角为80°时，虽然损伤层的深度最小，但损伤层并没有消失，而是作为非常浅的表面层保留下来。这些意见是由马洛代码的计算机模拟再现定性。
To study the damage profile development due to ion bombardment as a function of the ion dose and the ion incidence angle effect on the damage profiles, MEIS spectra were taken from a clean Si surface and ion beam sputtered Si surfaces. MEIS analysis shows that the surface layer becomes amorphous initially and the amorphous surface layer gets thicker for a Si(100) surface bombarded with 3 keV Ar+ions. The damage profile of the Si(100) saturated at the ion dose of3 × 1016ion/cm2at the incidence angle of 35° from the surface normal. At the saturation ion dose, the depth of the damaged layer was 9.6 nm. The depth of the damaged layer was significantly reduced from 14.2 nm at the surface normal to 4.8 nm at the incidence angle of 80°. Though the depth of the damaged layer was minimized for the sputtering at the extremely glancing angle of 80°, the damaged layer did not disappear but remained as a very shallow surface layer. These observations were reproduce by computer simulations by the Marlowe code qualitatively.