Effect of implantation temperature on the H-induced microstructural damage in AlN
Effect of implantation temperature on the H-induced microstructural damage in AlN
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DOI：
10.1016/j.jallcom.2013.10.227
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发表时间：
2014-03-05
影响因子：
6.2
通讯作者：
Singh, R.
中科院分区：
文献类型：
--
作者：
Dadwal, U.;Kumar, P.;Singh, R.
对不同注入温度下 (0001) AlN 外延层中 H 引起的微观结构损伤进行了详细的物理研究。横截面透射电子显微镜显示，在 300 摄氏度下注入的样品中，与较低的注入温度相比，仅在位于宽度类似于 280 nm 的损伤带中 H 浓度峰值下方的大约 50 nm 区域内形成扩展缺陷（纳米裂纹）。这种与注入温度相关的微观结构损伤行为决定了顶部屈曲表面的形态。基于本研究，提出了H注入表面以大面积剥落形式屈曲的各种有利条件。 (C) 2013 Elsevier B.V. 保留所有权利。
A detailed physical investigation of the H-induced microstructural damage in (0001) AlN epitaxial layers at various implantation temperatures is presented. Cross-sectional transmission electron microscopy revealed that in the case of samples implanted at 300 degrees C, extended defects (nanocracks) were formed only within similar to 50 nm region situated below the H-concentration peak in the damage band of width similar to 280 nm compared with lower implantation temperatures. This implantation temperature-dependent behavior of the microstructural damage decides the morphology of the top buckled surface. Various favorable conditions for the buckling of H-implanted surface in the form of large area exfoliation are proposed based on the present study. (C) 2013 Elsevier B.V. All rights reserved.