Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy
Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy
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DOI：
10.1063/1.3606469
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发表时间：
2011-07
影响因子：
3.2
通讯作者：
D. Satapathy;B. Jenichen;K. Ploog;W. Braun
中科院分区：
文献类型：
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作者：
D. Satapathy;B. Jenichen;K. Ploog;W. Braun
采用方位角反射高能电子衍射 (ARHEED) 和原位掠入射同步加速器 X 射线衍射技术研究了通过分子束外延 (MBE) 在 GaAs(001) 上生长的 MnAs 层的生长、外延取向和界面结构。我们展示了 ARHEED 扫描作为表征外延膜形成的常规工具的强大功能和可靠性。 ARHEED 扫描清楚地揭示了在 GaAs(001) 上生长过程中矩形 MnAs 晶胞的形成，MnAs 层厚度为 2.1 ± 0.2 单层，拉伸应变沿 MnAs[112−0] 方向。已知沿 MnAs [0001] 方向形成的周期性重合点晶格可以释放由于巨大的晶格失配 (~30%) 造成的应变，也会在 ARHEED 扫描中产生衍射斑的周期性卫星。使用 ARHEED 扫描可以直接观察 MBE 生长过程中 MnAs 不同外延取向的形成。 ARHEED 被证明具有...
Azimuthal reflection high-energy electron diffraction (ARHEED) and in situ grazing incidence synchrotron x-ray diffraction techniques are employed to investigate the growth, epitaxial orientation, and interfacial structure of MnAs layers grown on GaAs(001) by molecular beam epitaxy (MBE). We demonstrate the power and reliability of ARHEED scans as a routine tool in characterizing the formation of epitaxial films. The ARHEED scans clearly reveal the formation of the rectangular MnAs unit cell during growth on GaAs(001) for a MnAs layer thickness of 2.1 ± 0.2 monolayers with a tensile strain along the MnAs[112−0] direction. A periodic coincidence site lattice, which is known to form along the MnAs [0001] direction to release the strain due to the huge lattice mismatch (∼30%) also produces periodic satellites of the diffraction spots in the ARHEED scan. The formation of different epitaxial orientations of MnAs during MBE growth can be directly observed using ARHEED scans. ARHEED is demonstrated to have a res...