Low dielectric constant film formation by oxygen-radical polymerization of laser-evaporated siloxane
Low dielectric constant film formation by oxygen-radical polymerization of laser-evaporated siloxane
复制标题
激光蒸发硅氧烷氧自由基聚合形成低介电常数薄膜
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
S. Hattori
中科院分区：
文献类型：
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作者：
T. Fujii;T. Yokoi;M. Hiramatsu;M. Nawata;M. Hori;T. Goto;S. Hattori
聚硅氧烷薄膜被提议作为低介电常数层间电介质，用于超大规模集成电路的多层互连。使用硅氧烷低聚物的氧自由基聚合制备薄膜。通过使用 CO2 激光照射分解聚硅氧烷块状靶材，热分解产生各种硅氧烷低聚物。在薄膜沉积过程中，将远程微波 O2 等离子体产生的氧自由基注入真空室。 X射线光电子能谱和傅里叶变换红外光谱分析证实，随着基底温度的升高，氧自由基注入沉积的薄膜从聚硅氧烷转变为缺碳氧化硅。在CO2激光功率10W、O2压力50mTorr、微波功率100W、基板温度100℃下，聚硅氧烷膜的介电常数为2.0。
Polysiloxane thin films were proposed as low dielectric constant interlayer dielectrics for multilevel interconnection of ultralarge scale integration circuits. The films were prepared using oxygen-radical polymerization of siloxane oligomers. A variety of siloxane oligomers were thermally produced by the decomposition of polysiloxane bulk target using CO2 laser irradiation. Oxygen radicals generated by a remote microwave O2 plasma were injected into the vacuum chamber during film deposition. The films deposited with the oxygen radical injection were transformed from polysiloxane to carbon-deficient silicon oxide with increase of substrate temperature as confirmed by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy analyses. At a CO2 laser power of 10 W, an O2 pressure of 50 mTorr, a microwave power of 100 W, and a substrate temperature of 100 °C, the dielectric constant of the polysiloxane film was 2.0.