Enhanced photoluminescence from germanium-based ring resonators
Enhanced photoluminescence from germanium-based ring resonators
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DOI：
10.1063/1.2950087
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发表时间：
2008-07
影响因子：
4
通讯作者：
P. Lim;Yosuke Kobayashi;S. Takita;Y. Ishikawa;K. Wada
中科院分区：
文献类型：
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作者：
P. Lim;Yosuke Kobayashi;S. Takita;Y. Ishikawa;K. Wada
我们报道了基于绝缘体上硅（SOI）的锗环形谐振器直接带隙发射的增强。由于其强的限制作用，获得了创纪录的620的品质因数（Q），这比先前对晶体锗微腔所表征的品质因数高一个数量级。我们还描述了由于带边移动导致的Q对泵浦功率的依赖性，这在之前基于硅或锗的发射器中未曾报道过。相对峰值与基线强度随着Q值降低而下降，这归因于我们样品的波长尺度尺寸和高折射率对比度所产生的珀塞尔效应。
We report the enhancement of direct bandgap emission from germanium ring resonators based on silicon-on-insulator (SOI). As a consequence of their strong confinement, a record quality factor (Q) of 620 is obtained that is an order of magnitude higher than that previously characterized for crystalline germanium microcavities. We also describe a pump power dependency of Q due to bandedge shifts not previously reported for silicon-or germanium-based emitters. A decline in the relative peak to baseline intensities with lower Qs is attributed to the Purcell effect on account of the wavelength-scale dimensions and high index contrast of our samples.