3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors
3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors
复制标题
DOI：
10.1021/acs.nanolett.2c03616
复制
发表时间：
2022-12-08
期刊：
影响因子：
10.8
通讯作者：
Liu, Kai
中科院分区：
文献类型：
--
作者：
Bhattacharya, Dhritiman;Chen, Zhijie;Liu, Kai
互连磁性纳米线网络为三维信息存储和集成神经形态计算提供了一个很有前途的平台。在这里，我们报告的离散传播的磁场和电流驱动的相互连接的钴纳米线网络中的磁状态，表现在不同的磁阻（MR）功能。在这些网络中，当只测量了几个互连的NW时，观察到多个MR扭结和局部极小值，包括在下降场扫描期间在正场中的显著极小值。微磁模拟表明，这种不寻常的功能是由于畴壁（DW）钉扎在NW交叉点，这是证实了离轴电子全息成像。在一个具有多个交叉点的复杂网络中，观察到由互连线分隔的纳米线部分的顺序切换，沿着具有随机特性。可以通过驱动电流密度进一步控制DW的钉扎/脱钉扎。这些结果说明了这样的集成多态忆阻器互连网络的承诺。
Interconnected magnetic nanowire (NW) networks offer a promising platform for three-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.