Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors
Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors
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DOI：
10.1063/1.4811273
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发表时间：
2013-06-17
影响因子：
4
通讯作者：
Rajan, S.
中科院分区：
文献类型：
--
作者：
Boucherit, M.;Shoron, O. F.;Rajan, S.
我们报告的第一SrTiO 3/GdTiO 3（STO/GTO）异质结场效应晶体管（HFET）的制造和电特性。由于STO/GTO界面处的极性不连续性而形成的3 × 10（14）cm（-2）的高二维电子气（2DEG）密度被用作沟道以产生反向HFET。发现等离子体O-2处理在反向偏压下使电流泄漏减少3个数量级，从而导致整流肖特基行为。这里报道了0.6 × 10（14）cm（-2）的电荷调制，这代表了迄今为止在任何平面场效应晶体管中调制的最高薄层电荷。(C)2013 AIP Publishing LLC.
We report on the fabrication and electrical characteristics of the first SrTiO3/GdTiO3 (STO/GTO) heterostructure field-effect transistors (HFETs). The high two-dimensional electron gas (2DEG) density of 3 x 10(14) cm(-2) formed due to the polar discontinuity at the STO/GTO interface was used as a channel to create inverted HFETs. Plasma O-2 treatment was found to reduce current leakage by 3 orders of magnitude at reverse bias, leading to rectifying Schottky behavior. A charge modulation of 0.6 x 10(14) cm(-2) is reported here, which represents the highest sheet charge modulated in any planar field effect transistor to date. (C) 2013 AIP Publishing LLC.