First fabrication of full 3D-detectors at SINTEF
First fabrication of full 3D-detectors at SINTEF
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DOI：
10.1088/1748-0221/4/03/p03010
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发表时间：
2009-03-01
影响因子：
1.3
通讯作者：
Parker, Sherwood
中科院分区：
文献类型：
--
作者：
Hansen, Thor-Erik;Kok, Angela;Parker, Sherwood
电极穿透整个衬底的3D探测器在高能物理和医学成像应用中引起了极大的兴趣。自C.肯尼等人在1995年提出，许多实验室已经开始研究不同的3D探测器结构，以简化和工业化制造过程。SINTEF MiNaLab于2006年加入3D合作，并于2007年开始第一次3D制造。这是在中小规模生产中制造负担得起的3D探测器的第一步。第一轮于2008年2月全面完成，初步结果令人鼓舞。良好的p-n结特性已显示在选定的器件在芯片级的漏电流小于0.5 nA每像素。因此，SINTEF是继斯坦福大学纳米实验室之后，世界上第二个成功展示具有主动边缘的完整3D探测器的实验室。一个完整的3D堆叠探测器系统，形成了凸点结合的探测器的ATLAS读出电子，并成功的粒子击中地图使用的Am-241源记录。然而，大多数模块在组装后表现出大幅增加的漏电流，这是由于有源边缘和p-喷雾作为总芯片pn结的一部分而不是耗尽停止。本文介绍了第一次制作和遇到的处理问题。讨论了对单个探测器芯片和集成3D堆叠模块的初步测量。一个新的批次现在已经开始在p型晶圆上，它提供了一个更强大的配置，有源边缘作为耗尽停止，而不是pn结的一部分。
3D-detectors, with electrodes penetrating through the entire substrates have drawn great interests for high energy physics and medical imaging applications. Since its introduction by C. Kenney et al in 1995, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. SINTEF MiNaLab joined the 3D collaboration in 2006 and started the first 3D fabrication run in 2007. This is the first step in an effort to fabricate affordable 3D-detectors in small to medium size production volumes. The first run was fully completed in February 2008 and preliminary results are promising. Good p-n junction characteristics have been shown on selected devices at the chip level with a leakage current of less than 0.5 nA per pixel. Thus SINTEF is the second laboratory in the world after the Stanford Nanofabrication Facility that has succeeded in demonstrating full 3D-detectors with active edge. A full 3D-stacked detector system were formed by bump-bonding the detectors to the ATLAS readout electronics, and successful particle hit maps using an Am-241 source were recorded. Most modules, however, showed largely increased leakage currents after assembly, which is due to the active edge and p-spray acting as part of the total chip pn-junction and not as a depletion stop. This paper describes the first fabrication and the encountered processing issues. The preliminary measurements on both the individual detector chips and the integrated 3D-stacked modules are discussed. A new lot has now been started on p-type wafers, which offers a more robust configuration with the active edge acting as depletion stop instead of part of the pn-junction.