Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si 0.2 Ge 0.8 Reverse-Graded Buffers
Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si 0.2 Ge 0.8 Reverse-Graded Buffers
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在松弛 Si 0.2 Ge 0.8 反梯度缓冲层上生长的薄压缩应变 Ge 表面通道的热稳定性
DOI：
10.1149/2.063205jes
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发表时间：
2012
影响因子：
3.9
通讯作者：
Dobbie A
中科院分区：
文献类型：
--
作者：
Dobbie A
采用原位氢退火方法研究了在高质量弛豫Si0.2Ge0.8反梯度缓冲层上用减压化学气相沉积法生长的薄（≤ 110nm）压应变Ge表面沟道的热稳定性。应变弛豫被观察到，并发现增加较厚的通道和较高的退火温度。对于Ge沟道厚度≤ 45 nm，发现增加的表面粗糙化主导应变弛豫过程，最终导致岛化。对于较厚（≥ 45 nm）的Ge沟道，失配位错的产生是最主要的机制。我们的研究结果表明，低的热预算（T< 550 C），应采用的制造的0.65%的晶格失配应变锗沟道目前正在开发的应用在CMOS为基础的设备和应变绝缘体上的锗平台。
The thermal stability of thin (≤ 110 nm) compressively strained Ge surface channels, grown by reduced-pressure chemical vapor deposition on high quality relaxed Si 0.2 Ge 0.8 reverse-graded buffers, has been investigated using in-situ hydrogen annealing at temperatures up to 650 C. Strain relaxation was observed and found to increase for thicker channels and higher anneal temperatures. For a Ge channel thickness≤ 45 nm, an increased surface roughening was found to dominate the strain relaxation process, which culminated in islanding. For the thicker (≥ 45 nm) Ge channels misfit dislocation generation appeared to be the most dominant mechanism. Our results show that low thermal budgets (T< 550 C) should be employed for the fabrication of∼ 0.65% lattice mismatch strained Ge channels currently being developed for applications in CMOS-based devices and strained Ge-on-insulator platforms.