P-I-N CdTe Gamma Ray Detectors by Liquid Phase Epitaxy (LPE)
P-I-N CdTe Gamma Ray Detectors by Liquid Phase Epitaxy (LPE)
复制标题
采用液相外延 (LPE) 的 P-I-N CdTe 伽马射线探测器
DOI：
10.1109/tns.1985.4336879
复制
发表时间：
1985
影响因子：
1.8
通讯作者：
C. Fuller
中科院分区：
文献类型：
--
作者：
S. Shin;G. Niizawa;J. Pasko;G. Bostrup;F. Ryan;M. Khoshnevisan;C. Westmark;C. Fuller
采用p+(HgCdTe)-n(CdTe)-n+(HgCdTe)二极管结构，提出了一种新的器件概念。采用液相外延(LPE)技术在半绝缘的CdTe传感元件上生长了P+和n+Hg0.25Cd0.75Te外延层。与标准离子注入二极管或肖特基势垒器件相比，LPE生长的P-I-N结构在p-n结和欧姆接触形成方面具有潜在的优势。研制了有效面积为2 mm~2的探测器。在室温下，Co57的122keV伽马峰的分辨率为10keV。
A new device concept for CdTe gamma ray detectors has been demonstrated using p+(HgCdTe)-n(CdTe)-n+ (HgCdTe) diode structures. Both P+ and n+ Hg0.25Cd0.75Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction and ohmic contact formation over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm2 were fabricated. Resolutions of 10 KeV were obtained for the 122 KeV gamma peak of Co57 at room temperature.