Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe
Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe
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DOI：
10.1103/physrevb.82.245206
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发表时间：
2010-12
影响因子：
3.7
通讯作者：
S. Lynch;G. Matmon;S. Pavlov;K. Litvinenko;B. Redlich;A. F. G. Meer;N. Abrosimov;H. Hübers
中科院分区：
文献类型：
--
作者：
S. Lynch;G. Matmon;S. Pavlov;K. Litvinenko;B. Redlich;A. F. G. Meer;N. Abrosimov;H. Hübers
研究了硅锗中磷施主远红外光谱线展宽的原因。使用傅里叶变换红外光谱（FT-IR）和时间分辨泵浦-探测测量相结合，我们表明，线的形状主要是由不均匀加宽。实验FT-IR吸收光谱测量温度范围6-150 K的三个不同的Ge含量。在类似的实验条件下记录的纯磷掺杂硅的额外的光谱，并与SiGe的结果进行比较。我们提出了一个简单的定量模型来模拟我们的实验光谱线加宽。我们的模型考虑到随机SiGe二元合金的成分变化及其对每个施主周围环境的介电常数的影响。我们还表明，除了少量的锗硅单晶的激发红外电子能级的寿命几乎没有不利的影响，尽管观察到的线加宽。
The origins of line broadening in the far-infrared spectrum of phosphorus donors in SiGe are investigated. Using a combination of Fourier transform infrared (FT-IR) spectroscopy and time-resolved pump-probe measurements, we show that the line shapes are dominated by inhomogenous broadening. Experimental FT-IR absorbance spectra measured in the temperature range 6-150 K are presented for three different Ge contents. Additional spectra of pure phosphorus doped silicon recorded under similar experimental conditions are presented and compared with the SiGe results. We propose a simple quantitative model to simulate the line broadening in our experimental spectra. Our model takes into account the compositional variations in the random SiGe binary alloy and its effect on the permittivity of the environment around each donor. We also show that the addition of small amounts Ge to Si single crystals has little detrimental effect on the lifetime of the excited infrared electronic energy levels, despite the observed line broadening.